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1

Resonant electron tunneling in GaN/Ga1−xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

S. N. Grinyaev, A. N. Razzhuvalov

Journal:

Physics of the Solid State

Year:

2001

Language:

english

File:

PDF, 88 KB

english, 2001

2

The effect of internal fields on tunneling current in strained GaN/AlxGa1−xN(0001) structures

S. N. Grinyaev, A. N. Razzhuvalov

Journal:

Year:

2003

Language:

english

File:

PDF, 81 KB

english, 2003

3

Self-consistent calculation of tunneling current inw-GaN/AlGaN(0001) two-barrier heterostructures

S. N. Grinyaev, A. N. Razzhuvalov

Journal:

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

4

Hysteresis of tunnel current inw-GaN/AlGaN(0001) double-barrier structures

A. N. Razzhuvalov, S. N. Grinyaev

Journal:

Year:

2008

Language:

english

File:

PDF, 237 KB

english, 2008

5

A “capacitor” model of the hysteresis of tunneling current inw-GaN/AlGaN(0001) structures

A. N. Razzhuvalov, S. N. Grinyaev

Journal:

Physics of the Solid State

Year:

2009

Language:

english

File:

PDF, 326 KB

english, 2009

6

Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures

Karavaev, G. F., Chernyshov, V. N., Razzhuvalov, A. N.

Journal:

Russian Physics Journal

Year:

2012

Language:

english

File:

PDF, 526 KB

english, 2012

7

Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

Grinyaev, S. N., Razzhuvalov, A. N.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 967 KB

english, 2016

8

Tunneling current in w-GaN/AlN(0001) structures with deep-level defects

Razzhuvalov, A.N., Grinyaev, S.N.

Journal:

Superlattices and Microstructures

Year:

2018

Language:

english

File:

PDF, 1.11 MB

english, 2018